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| MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical tuning methods. * High Q * Controlled and Uniform Tuning Ratio * Standard Capacitance Tolerance - 10% * Complete Typical Design Curves * Device Marking: 4G http://onsemi.com 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 30 200 Unit Vdc mAdc 2 PLASTIC SOD-323 CASE 477 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit mW mW/C C/W C 1 CATHODE 2 ANODE RqJA TJ, Tstg *FR-4 Minimum Pad ORDERING INFORMATION Device MMVL2101T1 Package SOD-323 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 January, 2000 - Rev. 1 Publication Order Number: MMVL2101T1/D MMVL2101T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2101T1 Min 6.1 Nom 6.8 Max 7.5 Symbol V(BR)R IR TCC Min 30 -- -- Typ -- -- 280 Max -- 0.1 -- Unit Vdc Adc ppm/C Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = -65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: TCC + CT() 85C) - CT(-65C) 106 * 85 ) 65 CT(25C) Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q + 2pfC G Accuracy limited by measurement of CT to 0.1 pF. (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16". http://onsemi.com 2 MMVL2101T1 TYPICAL DEVICE CHARACTERISTICS 1000 500 C T , DIODE CAPACITANCE (pF) 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 TA = 25C f = 1.0 MHz VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 1.040 NORMALIZED DIODE CAPACITANCE I R , REVERSE CURRENT (nA) 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 -75 -50 NORMALIZED TO CT at TA = 25C VR = (CURVE) -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 0 5.0 10 15 20 25 30 TA = 125C TA = 75C TA = 25C VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature 5000 3000 2000 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) TA = 25C f = 50 MHz 20 30 5000 3000 2000 1000 500 300 200 100 50 30 20 10 10 Figure 3. Reverse Current versus Reverse Bias Voltage TA = 25C VR = 4.0 Vdc 20 100 30 50 70 f, FREQUENCY (MHz) 200 250 Figure 4. Figure of Merit versus Reverse Voltage Figure 5. Figure of Merit versus Frequency http://onsemi.com 3 MMVL2101T1 PACKAGE DIMENSIONS K A SOD-323 PLASTIC PACKAGE CASE 477-02 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. DIM A B C D E H J K MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 D 1 2 B E C J NOTE 3 H STYLE 1: PIN 1. CATHODE 2. ANODE 0.63 mm 0.025 1.60 mm 0.063 2.85 mm 0.112 mm inches 0.83 mm 0.033 SOD-323 Soldering Footprint Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 MMVL2101T1/D |
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